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| SKKT 106, SKKT 106B, SKKH 106 THYRISTOR Symbol Conditions Values Units SEMIPACK(R) 1 Thyristor / Diode Modules SKKT 106 SKKT 106B SKKH 106 Features Typical Applications 1) SKKT SKKH 1 09-03-2004 NOS (c) by SEMIKRON BRIDGE,SCR,BRIDGE RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 1L Power dissipation per thyristor vs. on-state current Fig. 1R Power dissipation per thyristor vs. ambient temp. Fig. 2L Power dissipation per module vs. rms current Fig. 2R Power dissipation per module vs. case temp. Fig. 3L Power dissipation of two modules vs. direct current Fig. 3R Power dissipation of two modules vs. case temp. 2 09-03-2004 NOS (c) by SEMIKRON SKKT 106, SKKT 106B, SKKH 106 THYRISTOR Fig. 4L Power dissipation of three modules vs. direct and rms current Fig. 4R Power dissipation of three modules vs. case temp. Fig. 5 Recovered charge vs. current decrease Fig. 6 Transient thermal impedance vs. time Fig. 7 On-state characteristics Fig. 8 Surge overload current vs. time 3 09-03-2004 NOS (c) by SEMIKRON BRIDGE,SCR,BRIDGE RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 9 Gate trigger characteristics Dimensions in mm This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 09-03-2004 NOS (c) by SEMIKRON |
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